Standard Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry (Withdrawn 2003)

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This test method covers the determination of total nitrogen concentration in the bulk of single crystal substrates using secondary ion mass spectrometry (SIMS) (1,2).

1.2 This test method can be used for silicon in which the dopant concentrations are less than 0.2 % (1 x 10²⁰ atoms/cm³) for boron, antimony, arsenic, and phosphorus.

1.3 This test method is for bulk analysis where the nitrogen concentration is constant with depth.

1.4 This test method can be used for silicon in which the nitrogen content is 1 x 10¹⁴ atoms/cm³ or greater. The detection capability depends upon the SIMS instrumental nitrogen background and the precision of the measurement.

1.5 This test method is complementary to infrared spectroscopy, electron paramagnetic resonance, deep level transient spectroscopy, and charged particle activation analysis (3). The infrared spectroscopy method detects nitrogen in specific vibrational states, rather than total nitrogen, and is limited to silicon with doping concentrations less than about 1 x 10¹⁷ atoms/cm³. The charged particle activation analysis detection capability is limited by an interference from boron.

1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.