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ASTM F1893-98(2003)
Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
F1893-98R03
ASTM|F1893-98R03|en-US
Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
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F1893 Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices>
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Significance and Use
The use of FXR radiation sources for the determination of high dose-rate burnout in semiconductor devices is addressed in this guide. The goal of this guide is to provide a systematic approach to testing for burnout.
The different type of failure modes that are possible are defined and discussed in this guide. Specifically, failure can be defined by a change in device parameters, or by a catastrophic failure of the device.
This guide can be used to determine the survivability of a device, that is, that the device survives a predetermined level; or the guide can be used to determine the survival dose-rate capability of the device. However, since this latter test is destructive, the minimum dose-rate level for failure must be determined statistically.
Scope
1.1 This guide defines the detailed requirements for testing microcircuits for short pulse high dose-rate ionization-induced failure. Large flash x-ray (FXR) machines operated in the photon mode, or FXR e-beam facilities are required because of the high dose-rate levels that are necessary to cause burnout. Two modes of test are possible (1) survival test, and (2) A failure level test.
1.2 The values stated in International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this standard.