Standard Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry (Withdrawn 2003)

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This test method covers the determination of total trace boron contamination in the bulk of single crystal, heavily doped n-type silicon substrates using secondary ion mass spectrometry (SIMS).

1.2 This test method can be used for silicon in which the dopant concentrations are less than 0.2% (1 by 10 20 atoms/cm3) for antimony, arsenic or phosphorus. This test method is especially applicable for silicon where boron, the p-type dopant, is an unintentional contaminant at trace levels (∧lt;5 by 10 14 atoms/cm3).

1.3 This test method can be used for silicon in which the boron contamination is greater than two times the SIMS detection limits that is approximately between 5 by 10 12 atoms/cm3 and 5 by 10 13 atoms/cm3 depending upon the instrumentation type described herein.

1.4 In principle, different sample surfaces can be used, but the precision estimate was taken from data on polished etched surfaces.

1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.