Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline (Withdrawn 2003)

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This test method covers the determination of the interstitial oxygen content of single crystal silicon by measurement of an infrared absorption band at room temperature. This test method requires the use of an oxygen-free reference specimen. It is recommended that a reference material, such as NIST SRM 2551, another certified reference material for oxygen content of silicon, or reference materials traceable to the CRMs, be used to calibrate the spectrophotometer in order to reduce bias.

1.2 This test method requires the use of a computerized spectrophotometer, preferably an FT-IR spectrophotometer. This method is incorporated into many modern FT-IR instruments.

1.3 The useful range of oxygen concentration measurable by this test method is from 1 X 10¹⁶ atoms/cm ³ to the maximum amount of interstitial oxygen soluble in silicon.

1.4 If the spectrophotometer is calibrated using 2-mm thick double-side polished CRMs, this test method is suitable for use only with 2-mm thick, double-side polished test specimens. It can be extended to the measurement of test specimens polished on one or both sides with thickness in the range 0.4 to 4 mm with the use of working reference materials traceable to the CRMs.

1.5 The oxygen concentration obtained using this test method assumes a linear relationship between the interstitial oxygen concentration and the absorption coefficient of the 1107 cm¹ band associated with interstitial oxygen in silicon.

1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.